Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in Si28

@article{Abraham2018MgpairIB,
  title={Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in 
Si28},
  author={Rohan J. S. Abraham and A. DeAbreu and Kevin J. Morse and Valentina B. Shuman and Leonid М. Portsel and A. N. Lodygin and Yu. A. Astrov and Nikolay V. Abrosimov and S. G. Pavlov and H. W. Hubers and Stephanie Simmons and Mike L. W. Thewalt},
  journal={Physical Review B},
  year={2018}
}
We use the greatly improved optical linewidths provided by highly enriched $^{28}$Si to study a photoluminescence line near 1017 meV previously observed in the luminescence spectrum of natural Si diffused with Mg, and suggested to result from the recombination of an isoelectronic bound exciton localized at a Mg-pair center. In $^{28}$Si this no-phonon line is found to be comprised of five components whose relative intensities closely match the relative abundances of Mg-pairs formed by random… Expand
4 Citations

Figures and Tables from this paper

Magnesium-related shallow donor centers in silicon
Abstract Magnesium (Mg) atoms, diffused in silicon (Si) lattice at high temperatures, tend to form specific bonds to host Si atoms, to other Mg atoms as well as to other defects in a Si crystal.Expand
Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon
Magnesium in silicon primarily occupies an interstitial site, where it acts as a moderately deep double donor. It has recently been shown that interstitial magnesium can pair with the substitutionalExpand
Investigation of the Magnesium Impurity in Silicon
Abstract The diffusion profiles of the concentration of electrically active and total concentrations of the magnesium impurity in silicon are measured. Diffusion is carried out by the sandwich methodExpand

References

SHOWING 1-10 OF 24 REFERENCES
Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si
Deep luminescence centers in Si associated with transition metals have been studied for decades, both as markers for these deleterious contaminants, as well as for the possibility of efficientExpand
Reduction of the linewidths of deep luminescence centers in 28Si reveals fingerprints of the isotope constituents.
TLDR
Dramatic reductions of the linewidths of well-known deep centers in 28Si reveal "isotopic fingerprints" of the constituents, suggesting a family of four-atom (Cu, Ag, Au) centers. Expand
Bound exciton recombination in beryllium-doped silicon
The low-temperature photoluminescence of beryllium-doped silicon is dominated by a system with sharp no-phonon lines at approximately 1.077 eV with well resolved phonon-assisted replicas at lowerExpand
Magnesium-related luminescence in silicon
Photoluminescence properties of magnesium (Mg) doped silicon have been studied. Spectra, only observed in Mg-doped samples, exhibit a broad set of lines in the energy region between 1.00 eV and 1.07Expand
Evidence for a substitutional Mg acceptor level in silicon.
TLDR
Among group-II impurities in silicon, Be and Zn result in substitutional acceptors while Mg has been known to cause only interstitial donor levels, but there are sufficient grounds to suggest that this could be the missing substitutional Mg acceptor level in silicon. Expand
Further investigations of the deep double donor magnesium in silicon
The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical properties which may enable a spin/photonic quantum technology. The interstitial magnesium impurityExpand
Infrared absorption spectrum of singly ionized magnesium donors in silicon
The infrared absorption spectrum of singly ionized magnesium donor impurities in silicon has been measured. Due to better sample preparation and higher resolution of the instrument, the absorptionExpand
Study of beryllium and beryllium-lithium complexes in single-crystal silicon.
When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-meV level is due to aExpand
Isotope effects on the optical spectra of semiconductors
Since the end of the cold war, macroscopic amounts of separated stable isotopes of most elements have been available ``off the shelf'' at affordable prices. Using these materials, single crystals ofExpand
A simple asymmetric lineshape for fitting infrared absorption spectra
Abstract Almost exclusively, lineshape functions used to model infrared (IR) absorption peaks are based on symmetric frequency distributions. However, in complex systems such as large biologicalExpand
...
1
2
3
...