Mg doping affects dislocation core structures in GaN.

@article{Rhode2013MgDA,
  title={Mg doping affects dislocation core structures in GaN.},
  author={Stefanie Rhode and Matthew K. Horton and Menno J. Kappers and Shuang Zhang and Colin J. Humphreys and Rajiv Onkar Dusane and S -L Sahonta and Michelle A. Moram},
  journal={Physical review letters},
  year={2013},
  volume={111 2},
  pages={025502}
}
Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in undoped GaN films with both high and low dislocation densities, and in a comparable high dislocation density Mg-doped GaN film. All a-type dislocations in all samples have a 5/7-atom core structure. In contrast, most (a+c)-type dislocations in undoped GaN dissociate due to local strain variations from nearby dislocations. In contrast, Mg doping prevents (a+c… CONTINUE READING