Metrology for characterization of wafer thickness uniformity during 3DS-IC processing

@article{Dunn2012MetrologyFC,
  title={Metrology for characterization of wafer thickness uniformity during 3DS-IC processing},
  author={Tyler J. Dunn and Chung-ham Lee and M. Tronolone and Aric B. Shorey},
  journal={2012 IEEE 62nd Electronic Components and Technology Conference},
  year={2012},
  pages={1239-1244}
}
There is a constant desire to increase substrate size in order to improve cost effectiveness of semiconductor processes. As the wafer diameter has increased from 2” to 12”, the thickness has remained largely the same, resulting in a wafer form factor with inherently low stiffness. Gravity induced deformation becomes important when using traditional metrology tools and mounting strategies to characterize a wafer with such low stiffness. While there are strategies used to try to reduce the… CONTINUE READING
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