Method of manufacturing semiconductor capacitor having a hemispherical grain layer

@inproceedings{2000MethodOM,
  title={Method of manufacturing semiconductor capacitor having a hemispherical grain layer},
  author={정승필 and 장규환 and 권영민 and 하상록},
  year={2000}
}
PURPOSE: A method for manufacturing a semiconductor device with an HSG(HemiSphere Grain) layer is provided to optimize a growing condition of an HSG layer formed on a surface of a storage electrode. CONSTITUTION: A storage electrode formation material is deposited on an interlayer dielectric including a contact hole.(S10) A storage electrode pattern is formed by forming and etching a photoresist layer on the storage electrode formation material.(S20) The first wet cleaning process is performed… CONTINUE READING