Corpus ID: 140738556

Method of forming contact of semicondcutor device

@inproceedings{1997MethodOF,
  title={Method of forming contact of semicondcutor device},
  author={박철수 and 황치선 and 한창훈},
  year={1997}
}
  • 박철수, 황치선, 한창훈
  • Published 1997
  • Materials Science
  • The present invention relates to a contact process for manufacturing a semiconductor device, a self-aligned contact formation process, the first conductive layer in the second storage when the contact holes of the conductive layer formed electrode contact when forming the second contact hole of the conductive layer in the this is by forming a contact hole in the second conductive layer etching by eliminating the barrier layer of the portion to be formed by simplifying the process to a technique… CONTINUE READING

    Create an AI-powered research feed to stay up to date with new papers like this posted to ArXiv