Method for tight-binding parametrization: Application to silicon nanostructures

@inproceedings{Niquet2000MethodFT,
  title={Method for tight-binding parametrization: Application to silicon nanostructures},
  author={Y. M. Niquet and Christophe Delerue and Guy Allan and M. Lannoo},
  year={2000}
}
We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall band structure. We apply it to the specific case of silicon. The electronic states of silicon nanostructures ~film , wires, and dots !, with various shapes and orientations, are calculated over large… CONTINUE READING
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