Method and apparatus for endpoint detection in the etching using an electron beam

@inproceedings{2003MethodAA,
  title={Method and apparatus for endpoint detection in the etching using an electron beam},
  author={ナサー−ゴディシ・メヘラン},
  year={2003}
}
Technology for detecting an end point during A semiconductor dry etching process is disclosed. Dry etch process of the present invention uses a combination of a reactive material and an electron beam. In another embodiment, in order to facilitate the etching process, the photon beam is used. Endpoint detection technique, comprising the step of monitoring the radiation level of the secondary electrons and backscattered electrons, and a current in the sample. Depending on the weight given to each… CONTINUE READING