Metamagnetism of Weakly Coupled Antiferromagnetic Topological Insulators.

  title={Metamagnetism of Weakly Coupled Antiferromagnetic Topological Insulators.},
  author={A. Tan and Valentin Labracherie and Narayan Kunchur and Anja U. B. Wolter and Joaquin Cornejo and Joseph Dufouleur and Bernd B{\"u}chner and Anna Isaeva and Romain Giraud},
  journal={Physical review letters},
  volume={124 19},
The magnetic properties of the van der Waals magnetic topological insulators MnBi_{2}Te_{4} and MnBi_{4}Te_{7} are investigated by magnetotransport measurements. We evidence that the relative strength of the interlayer exchange coupling J to the uniaxial anisotropy K controls a transition from an A-type antiferromagnetic order to a ferromagneticlike metamagnetic state. A bilayer Stoner-Wohlfarth model allows us to describe this evolution, as well as the typical angular dependence of specific… 

Figures from this paper

Metamagnetism of few-layer topological antiferromagnets

MnBi2Te4 (MBT) is a promising antiferromagnetic topological insulator whose films provide access to novel and technologically important topological phases, including quantum anomalous Hall states and

Two-dimensional ferromagnetism with long-range interactions in the layered magnetic topological insulator MnBi2Te4.

MnBi2Te4(MBT) is a promising van der Waals layered antiferromagnetic (AF) topological insulator that combines a topologically non-trivial inverted Bi-Te band gap with ferromagnetic (FM) layers of Mn

Pressure-Tuned Intralayer Exchange in Superlattice-Like MnBi2Te4/(Bi2Te3)n Topological Insulators.

First-principles calculations reveal the essential role of intralayer exchange coupling from lattice compression in determining these magnetic properties in 20% Sb-doped MnBi6Te10.

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

The intrinsic magnetic layered topological insulator MnBi2Te4 with nontrivial topological properties and magnetic order has become a promising system for exploring exotic quantum phenomena such as

Finite temperature fluctuation-induced order and responses in magnetic topological insulators

Marius Scholten, Jorge I. Facio, Rajyavardhan Ray, 2 Ilya M. Eremin, Jeroen van den Brink, 4 and Flavio S. Nogueira Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstr. 20, 01069

Effect on the Electronic and Magnetic Properties of Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ with Sn Doping

We thoroughly investigate the effect of nonmagnetic Sn doping on the electronic and magnetic properties of antiferromagnetic topological insulator MnBi 2 Te 4 . We observe that Sn doping reduces the

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification.

The topological electronic structure plays a central role in the nontrivial physical properties in topological quantum materials. A minimal, "hydrogen-atom-like" topological electronic structure is

Magnetic warping in topological insulators

We analyze the electronic structure of topological surface states in the family of magnetic topological insulators MnBi 2 n Te 3 n +1 . We show that, at natural-cleavage surfaces, the Dirac cone

Ferromagnetic–antiferromagnetic coexisting ground states and exchange bias effects in MnBi 4 Te 7 and MnBi 6 Te 10

MnBi4Te7 and MnBi6Te10 Xiaolong Xu,1,2,3,† Shiqi Yang,1,4,† Huan Wang, Roger Guzman, Yaozheng Zhu, Yuxuan Peng, Zhihao Zang, Ming Xi, Shangjie Tian, Yanping Li, Hechang Lei, Zhaochu Luo, Jinbo Yang,

Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in $\bf{MnBi_4Te_7}$ and $\bf{MnBi_6Te_{10}}$

MnBi4Te7 and MnBi6Te10 Xiaolong Xu,1,2,3,† Shiqi Yang,1,4,† Huan Wang, Roger Guzman, Yaozheng Zhu, Yuxuan Peng, Zhihao Zang, Ming Xi, Shangjie Tian, Yanping Li, Hechang Lei, Zhaochu Luo, Jinbo Yang,



Quantum phase transitions of a disordered antiferromagnetic topological insulator

We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase

A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling

The low saturation field and the superlattice nature of MnBi4Te7 make it an ideal system to investigate rich emergent phenomena and an intrinsic natural heterostructural Z2 antiferromagnetic topological insulator with low out-of-plane saturation fields.

Prediction and observation of an antiferromagnetic topological insulator

An intrinsic antiferromagnetic topological insulator, MnBi2Te4, is theoretically predicted and then realized experimentally, with implications for the study of exotic quantum phenomena.

Topological antiferromagnetic spintronics

The recent demonstrations of electrical manipulation and detection of antiferromagnetic spins have opened up a new chapter in the story of spintronics. Here, we review the emerging research field

Topological Axion States in the Magnetic Insulator MnBi_{2}Te_{4} with the Quantized Magnetoelectric Effect.

It is predicted that the tetradymite-type compound MnBi_{2}Te_{4} and its related materials host topologically nontrivial magnetic states that might lead to a minimal ideal Weyl semimetal.

Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials

This work predicts a series of van der Waals layered MnBi2Te4-related materials that show intralayer ferromagnetic and interlayer antiferromagnetic exchange interactions that could profoundly change future research and technology of topological quantum physics.

Magnetic extension as an efficient method for realizing the quantum anomalous hall state in topological insulators

A new efficient method is proposed for inducing magnetism on the surface of a topological insulator through the deposition of a thin film of an isostructural magnetic insulator whose atomic

Natural van der Waals heterostructural single crystals with both magnetic and topological properties

The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

This work investigates the quantum transport of both bulk crystal and exfoliated MnBi 2 Te 4 flakes in a field-effect transistor geometry and observes a large longitudinal resistance and zero Hall plateau, which are characteristics of an axion insulator state.

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

It is found that there exists an optimized MTI zone in the Mn(Sb x Bi(1-x))2Te4 phase diagram, which could possibly host a high-temperature QAH phase, offering a promising avenue for new device applications.