Metal-face InAlN / AlN / GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

@inproceedings{Guo2011MetalfaceI,
  title={Metal-face InAlN / AlN / GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy},
  author={Jia Guo and Yu Cao and Chuanxin Lian and Tom Zimmermann and Guowang Li and Jai K. Verma and Xiang Gao and Shiping Guo and P. Saunier and Mark A. Wistey and Debdeep Jena and Grace Xing},
  year={2011}
}
Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal-face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO2 mask nþ-GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF after regrowth. The lowest contact resistance measured was 0.40 0.23Vmm by the transmission line method (TLM) in this initial study. The peak output current density of 1.25A/mm at Vgs1⁄4 3V and extrinsic… CONTINUE READING

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