Metal contacts in nanocrystalline n-type GaN: Schottky diodes.

@article{Das2009MetalCI,
  title={Metal contacts in nanocrystalline n-type GaN: Schottky diodes.},
  author={Satarupa Das and Subhasis Sarangi and Shiba Narayan Sahu and Anil Kumar Pal},
  journal={Journal of nanoscience and nanotechnology},
  year={2009},
  volume={9 4},
  pages={2532-9}
}
Contact properties in nanocrystalline n-GaN in thin film form were studied by depositing nanocrystalline films onto aluminium coated fused silica substrates by high pressure sputtering of Si (1 at%) doped GaN target. Schottky diodes were realized with Au, Ni and Pd as top contacts on the nanocrystalline n-GaN films to examine the contact properties of the diodes thus formed. Variation of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Schottky diodes were recorded at… CONTINUE READING

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