Metal Hole Arrays as Resonant Photo-Coupler for Charge Sensitive Infrared Phototransistors

@article{Nickels2010MetalHA,
  title={Metal Hole Arrays as Resonant Photo-Coupler for Charge Sensitive Infrared Phototransistors},
  author={Patrick Nickels and S Matsuda and Takahiro Ueda and Zhenghua An and Susumu Komiyama},
  journal={IEEE Journal of Quantum Electronics},
  year={2010},
  volume={46},
  pages={384-390}
}
Metallic photo-couplers utilizing surface plasmon polariton (SPP) excitation have been studied experimentally and theoretically for improving the quantum efficiency of charge sensitive infrared phototransistors (CSIP). Metallic hole arrays deposited on top of the photo-active area of CSIPs (wavelength of 14.7 ¿m) induce intensified near fields for the intersubband transition in a GaAs quantum well at 100 nm below the metal/substrate interface. Cross-hole arrays yield the highest efficiency of 7… CONTINUE READING
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