Metal–Oxide RRAM

  title={Metal–Oxide RRAM},
  author={H.-S. Philip Wong and Heng-Yuan Lee and Shimeng Yu and Yu-Sheng Chen and Yi Wu and Pang-Shiu Chen and Byoungil Lee and Frederick T. Chen and Ming-Jinn Tsai},
  journal={Proceedings of the IEEE},
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed. 
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