Merged three-terminal magnetotransistor based on the carrier recombination - deflection effect

@article{Leepattarapongpan2008MergedTM,
  title={Merged three-terminal magnetotransistor based on the carrier recombination - deflection effect},
  author={Chana Leepattarapongpan and Naritchaphan Penpondee and T. Phetchakul and W. Phengan and Ekalak Chaowicharat and C. Hruanun and Ampom Poyai},
  journal={2008 IEEE Sensors},
  year={2008},
  pages={399-402}
}
This article presents a merged three terminals magnetotransistor based on the carrier recombination - deflection effect. This particular magnetotransistor structure relies on the combination of difference of base current and collector current in +x and -x directions. As a result, the output voltage and absolute sensitivity to magnetic field will be double. The structure of magnetotransistor consists of one emitter, two collector and two base contacts. The devices can detect magnetic field in… CONTINUE READING