# Memristor modelling

@article{Muthuswamy2014MemristorM, title={Memristor modelling}, author={Bharathwaj Muthuswamy and Jovan Jevtic and Herbert Ho-Ching Iu and C. K. Subramaniam and Kaliyaperumal Ganesan and V. Sankaranarayanan and K. Sethupathi and Hyongsuk Kim and Maheshwar Prasad Sah and Leon Ong Chua}, journal={2014 IEEE International Symposium on Circuits and Systems (ISCAS)}, year={2014}, pages={490-493} }

In this paper, we show a simple circuit setup for experimentally plotting the v - i non-transversal pinched-hysteresis Lissajous fingerprint of a physical memristor - the common fluorescent gas discharge tube. The setup helped us investigate the effects of physical parasitics (inductors and capacitors) on the memristor v - i.

## 5 Citations

A Generic Model of Memristors With Parasitic Components

- EngineeringIEEE Transactions on Circuits and Systems I: Regular Papers
- 2015

A generic model of memristive systems, which can emulate the behavior of real Memristive devices is proposed, by adding four parasitic circuit elements, namely, asmall capacitance, a small inductance, aSmall DC current source, and a small DC voltage source, to the memristIVE device.

Analysis and generation of chaos using compositely connected coupled memristors.

- EngineeringChaos
- 2018

A new way through which memristor-based circuit dynamics can be influenced by tuning the coupling strength between memristors without changing other circuit parameters is provided.

Chaos in a Single Op-Amp–Based Jerk Circuit: Experiments and Simulations

- PhysicsIEEE Transactions on Circuits and Systems II: Express Briefs
- 2016

A five-component autonomous chaotic oscillator of jerky type, hitherto the simplest of its kind, using only one operational amplifier, is reported, emulating a Colpitts-like chaotic circuit.

Spike neural network architecture with memristive synapses using predictive Cmos model

- Computer Science
- 2020

Two types of Integrate and Fire Neuron (if) (IF) are presented using 32nm CMOS technology simulated in LTspice with BSIM4v4 model designed by Berkley University and applying predictive parameters provided by Predictive Technology Model (PTM).

## References

SHOWING 1-9 OF 9 REFERENCES

A chaotic circuit based on Hewlett-Packard memristor.

- PhysicsChaos
- 2012

A chaotic circuit based on the mathematical realistic model of the HP Memristor is introduced, which makes use of two HP memristors in antiparallel.

Three Fingerprints of Memristor

- EngineeringIEEE Transactions on Circuits and Systems I: Regular Papers
- 2013

This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched…

Controlling Chaos in a Memristor Based Circuit Using a Twin-T Notch Filter

- PhysicsIEEE Transactions on Circuits and Systems I: Regular Papers
- 2011

In this paper, a systematic study of chaotic behavior in memristor based chaotic circuits is performed with the help of nonlinear tools such as bifurcation diagrams, power spectrum analysis, and Lyapunov exponents.

Memristive devices and systems

- EngineeringProceedings of the IEEE
- 1976

A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are…

Low voltage resistive switching devices based on chemically produced silicon oxide

- Engineering
- 2013

We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching…

Device modeling via nonlinear circuit elements

- Engineering
- 1980

Contrary to what is the case in linear circuit theory, it is shown that an infinite variety of basic algebraic and dynamic elements will be needed in the eventual formulation of a unified theory on device modeling.

Memristor-The missing circuit element

- Physics
- 1971

A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-…

Frequency Power Formulas for Josephson Junctions”, Microwave and Millimeter Wave Techniques, MIT

- Technical Report QPR-113,
- 1974

Frequency Power Formulas for Josephson Junctions

- Microwave and Millimeter Wave Techniques
- 1974