Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy

@article{Ageev2013MemristorEO,
  title={Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy},
  author={O. Ageev and Yu. F. Blinov and O. Il’in and A. Kolomiitsev and B. Konoplev and M. V. Rubashkina and V. Smirnov and A. Fedotov},
  journal={Technical Physics},
  year={2013},
  volume={58},
  pages={1831-1836}
}
We report on the results of experimental study of an array of vertically aligned carbon nanotubes (VA CNTs) by scanning tunnel microscopy (STM). It is shown that upon the application of an external electric field to the STM probe/VA CNT system, individual VA CNTs are combined into bundles whose diameter depends on the radius of the tip of the STM probe. The memristor effect in VA CNTs is detected. For the VA CNT array under investigation, the resistivity ratio in the low- and high-resistance… Expand

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