Memristor Equations: Incomplete Physics and Undefined Passivity/Activity

@article{Sundqvist2022MemristorEI,
  title={Memristor Equations: Incomplete Physics and Undefined Passivity/Activity},
  author={Kyle M. Sundqvist and David K. Ferry and Laszlo B. Kish},
  journal={The Random and Fluctuating World},
  year={2022}
}
In his seminal paper, Chua presented a fundamental physical claim by introducing the memristor, “The missing circuit element”. The memristor equations were originally supposed to represent a passive circuit element because, with active circuitry, arbitrary elements can be realized without limitations. Therefore, if the memristor equations do not guarantee that the circuit element can be realized by a passive system, the fundamental physics claims about the memristor as “missing circuit element… 

Figures from this paper

Memristive Charge-Flux Interaction Still Makes It Possible To Find An Ideal Memristor
In 1971, Chua defined an ideal memristor that links charge q and flux φ. In this work, we demonstrated that the direct interaction between physical charge q and physical flux φ is memristive by
An experimental demonstration of the memristor test
An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors
TLDR
The results unambiguously show that electrochemical metallization memory cells are not memristor, and cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally.
Reply to arXiv: 2102.11963, An experimental demonstration of the memristor test, Y. V. Pershin, J. Kim, T. Datta, M. Di Ventra, 23 Feb 2021. Does an ideal memristor truly exist?
TLDR
A prototype device is developed and experimentally demonstrated that the direct q-φ interaction could be memristive, as predicted by Chua in 1971, and meets three criteria for an ideal memristor: a single-valued, nonlinear, continuously differentiable, and strictly monotonically increasing constitutive φ-q curve.
Resistorless Memristor Emulator Using CFTA and Its Experimental Verification
TLDR
This article presents a novel charge-controlled memristor emulator circuit that utilizes a single Current Follower Transconductance Amplifier (CFTA) as an active current mode analog building block and a grounded capacitor as a passive element.
Numerical simulations of the linear drift memristor model
TLDR
This work analyzes the linear drift model, comparing the numerical solutions with analytical solutions and SPICE simulations and demonstrates that different solutions can be found depending on the method and parameter set.
Bifurcation analysis of a TaO memristor model
TLDR
The main finding is the identification of a driving regime when two stable fixed points exist simultaneously, and to the best of the knowledge, such bistability is identified in a single memristor for the first time.
Comment on "If it's pinched it's a memristor" by L. Chua [Semicond. Sci. Technol 29, 104001 (2014)]
TLDR
Correcting the wrong statements in Chua's paper is done, which leads the author to the erroneous conclusion that charge-voltage curves of any memcapacitive devices should be pinched at the origin.
The case for rejecting the memristor as a fundamental circuit element
TLDR
This report investigates the assertion that the memristor is a fundamental passive circuit element, from the fresh perspective that electrical engineering is the science of charge management, and demonstrates with a periodic table of fundamental elements that the 2008 mem Bristor is not the 1971 postulate and neither of them is fundamental.

References

SHOWING 1-10 OF 16 REFERENCES
Fundamental Issues and Problems in the Realization of Memristors
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film
The Missing Memristor has Not been Found
TLDR
It is maintained that the originally hypothesized real memristor device is missing and likely impossible, and the argument is illustrated also by finding an ideal mechanical Memristor element and purely mechanical memristive systems, and hypothesizing a real mechanical mem Bristor device that requires inert mass just like the 1971 implied device requires magnetic induction.
On the physical properties of memristive, memcapacitive and meminductive systems
TLDR
It is shown that ideal memristors, namely those whose state depends only on the charge that flows through them (or on the history of the voltage), are subject to very strict physical conditions and are unable to protect their memory state against the unavoidable fluctuations, and therefore are susceptible to a stochastic catastrophe.
Resistance switching memories are memristors
  • L. Chua
  • Physics
    Handbook of Memristor Networks
  • 2019
TLDR
The goal of this tutorial is to introduce some fundamental circuit-theoretic concepts and properties of the memristor that are relevant to the analysis and design of non-volatile nano memories where binary bits are stored as resistances manifested by the Memristor’s continuum of equilibrium states.
Zero-point term and quantum effects in the Johnson noise of resistors: a critical appraisal
There is a longstanding debate about the zero-point term in the Johnson noise voltage of a resistor. This term originates from a quantum-theoretical treatment of the fluctuation-dissipation theorem
Zero Thermal Noise in Resistors at Zero Temperature
The bandwidth of transistors in logic devices approaches the quantum limit, where Johnson noise and associated error rates are supposed to be strongly enhanced. However, the related theory —
The Kish Cypher
  • World Scientific
  • 2017
...
...