Memristor Equations: Incomplete Physics and Undefined Passivity/Activity

  title={Memristor Equations: Incomplete Physics and Undefined Passivity/Activity},
  author={K. Sundqvist and D. Ferry and L. Kish},
  journal={Fluctuation and Noise Letters},
In his seminal paper, Chua presented a fundamental physical claim by introducing the memristor, “The missing circuit element”. The memristor equations were originally supposed to represent a passive circuit element because, with active circuitry, arbitrary elements can be realized without limitations. Therefore, if the memristor equations do not guarantee that the circuit element can be realized by a passive system, the fundamental physics claims about the memristor as “missing circuit element… Expand
Reply to arXiv: 2102.11963, An experimental demonstration of the memristor test, Y. V. Pershin, J. Kim, T. Datta, M. Di Ventra, 23 Feb 2021. Does an ideal memristor truly exist?
A prototype device is developed and experimentally demonstrated that the direct q-φ interaction could be memristive, as predicted by Chua in 1971, and meets three criteria for an ideal memristor: a single-valued, nonlinear, continuously differentiable, and strictly monotonically increasing constitutive φ-q curve. Expand
Resistorless Memristor Emulator Using CFTA and Its Experimental Verification
This article presents a novel charge-controlled memristor emulator circuit that utilizes a single Current Follower Transconductance Amplifier (CFTA) as an active current mode analog building block and a grounded capacitor as a passive element. Expand
A simple test for ideal memristors
An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed throughExpand
Numerical simulations of the linear drift memristor model
This work analyzes the linear drift model, comparing the numerical solutions with analytical solutions and SPICE simulations and demonstrates that different solutions can be found depending on the method and parameter set. Expand
Comment on "If it's pinched it's a memristor" by L. Chua [Semicond. Sci. Technol 29, 104001 (2014)]
Correcting the wrong statements in Chua's paper is done, which leads the author to the erroneous conclusion that charge-voltage curves of any memcapacitive devices should be pinched at the origin. Expand
Bifurcation analysis of a TaO memristor model
The main finding is the identification of a driving regime when two stable fixed points exist simultaneously, and to the best of the knowledge, such bistability is identified in a single memristor for the first time. Expand
Halogen-containing semiconductors: From artificial photosynthesis to unconventional computing
Abstract Unconventional computing and artificial photosynthesis seem to be completely unrelated fields of research. However, both technologies try to sustain the development of our civilizationExpand
An experimental demonstration of the memristor test
This paper experimentally applies a simple and unambiguous test to a current-carrying wire interacting with a magnetic core, which was recently claimed to be a memristor (so-called ‘Φ Memristor’) and demonstrates unambiguously that this ‘ Φ memristors’ is not a mem Bristor: it is simply an inductor with memory. Expand
An experimental proof that resistance-switching memories are not memristors
The results unambiguously show that electrochemical metallization memory cells are not memristor, and cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. Expand
The case for rejecting the memristor as a fundamental circuit element
  • I. Abraham
  • Computer Science, Medicine
  • Scientific Reports
  • 2018
This report investigates the assertion that the memristor is a fundamental passive circuit element, from the fresh perspective that electrical engineering is the science of charge management, and demonstrates with a periodic table of fundamental elements that the 2008 mem Bristor is not the 1971 postulate and neither of them is fundamental. Expand


Memristor-The missing circuit element
A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-Expand
Fundamental Issues and Problems in the Realization of Memristors
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 filmExpand
The Missing Memristor has Not been Found
It is maintained that the originally hypothesized real memristor device is missing and likely impossible, and the argument is illustrated also by finding an ideal mechanical Memristor element and purely mechanical memristive systems, and hypothesizing a real mechanical mem Bristor device that requires inert mass just like the 1971 implied device requires magnetic induction. Expand
Second Law based definition of passivity/activity of devices
Abstract Recently, our efforts to clarify the old question, if a memristor is a passive or active device [1], triggered debates between engineers, who have had advanced definitions ofExpand
On the physical properties of memristive, memcapacitive and meminductive systems.
It is shown that ideal memristors, namely those whose state depends only on the charge that flows through them (or on the history of the voltage), are subject to very strict physical conditions and are unable to protect their memory state against the unavoidable fluctuations, and therefore are susceptible to a stochastic catastrophe. Expand
Resistance switching memories are memristors
The goal of this tutorial is to introduce some fundamental circuit-theoretic concepts and properties of the memristor that are relevant to the analysis and design of non-volatile nano memories where binary bits are stored as resistances manifested by the Memristor’s continuum of equilibrium states. Expand
Zero-point term and quantum effects in the Johnson noise of resistors: A critical appraisal
There is a longstanding debate about the zero-point term in the Johnson noise voltage of a resistor. This term originates from a quantum-theoretical treatment of the Fluctuation-Dissipation TheoremExpand
Zero Thermal Noise in Resistors at Zero Temperature
The bandwidth of transistors in logic devices approaches the quantum limit, where Johnson noise and associated error rates are supposed to be strongly enhanced. However, the related theory —Expand
Non-linear thermal fluctuations in a diode
Abstract As an example of non-linear noise the fluctuations in a circuit consisting of a diode and a condenser C are studied. From the master equation for this system the following results areExpand
Notes on Recent Approaches Concerning the Kirchhoff-Law-Johnson-Noise-based Secure Key Exchange
It is shown that the strong security leak appeared in the simulations is only an artifact and not caused by “multiple reflections”, and the proposed method to increase security by dropping only high-risk bits is analyzed. Expand