Memristive switching of MgO based magnetic tunnel junctions
@article{Krzysteczko2009MemristiveSO, title={Memristive switching of MgO based magnetic tunnel junctions}, author={Patryk Krzysteczko and G{\"u}nter Reiss and A Thomas}, journal={Applied Physics Letters}, year={2009}, volume={95}, pages={112508} }
Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending on the bias history, which provides a method for multibit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO…
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