Memristive switching of MgO based magnetic tunnel junctions

@article{Krzysteczko2009MemristiveSO,
  title={Memristive switching of MgO based magnetic tunnel junctions},
  author={Patryk Krzysteczko and G{\"u}nter Reiss and A. Thomas},
  journal={Applied Physics Letters},
  year={2009},
  volume={95},
  pages={112508}
}
Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending on the bias history, which provides a method for multibit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO… Expand

Figures and Tables from this paper

Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5
The bipolar memristive switching of stoichiometric crystalline Ge2Sb2Te5 (GST) thin film has been demonstrated. In contrast to the filamentary switching reported previously for a GST memristor, theExpand
Electrically programmable magnetoresistance in -based magnetic tunnel junctions
We report spin‐dependent transport properties and I–V hysteresis characteristics in an AlO x ‐based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measuredExpand
Preparation of Ta-O-based tunnel junctions to obtain artificial synapses based on memristive switching.
TLDR
The materials and techniques to deposit the layer stacks, define the structures, and etch the devices exhibiting memristive switching for potential use as artificial synapses are presented. Expand
Improved reliability of magnetic field programmable gate arrays through the use of memristive tunnel junctions
Since the recent successful implementation of the long-hypothesized memristor, its use in neuronal computing and in the reproduction of biological neural networks has gained increasing attention. InExpand
Resistance switching in transparent magnetic MgO films
Abstract We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conductionExpand
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. ConventionalExpand
Tunnel junction based memristors as artificial synapses
TLDR
A possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms is suggested. Expand
The memristive magnetic tunnel junction as a nanoscopic synapse-neuron system.
TLDR
This work used memristive magnetic tunnel junctions based on MgO to demonstrate that the synaptic functionality is complemented by neuron-like behavior in these nanoscopic devices, and showed that a phenomenon known as back-hopping leads to repeated switching between two resistance levels accompanied by current spiking, which emulates neuronal behavior. Expand
Switching mechanisms in flexible solution-processed TiO₂ memristors.
TLDR
The switching mechanism of the solution-processed titanium dioxide-based memristor is investigated by studying how variations in the device area and film thickness affect electrical behavior and correlating these behavioral changes to proposed switching mechanisms. Expand
Electrically programmable magnetoresistance in [Formula: see text]-based magnetic tunnel junctions.
TLDR
The study reveals the possibility of controlling the multiple resistive states in a single [Formula: see text]-based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices. Expand
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 25 REFERENCES
Unipolar resistive switching in CoFeB /MgO/CoFeB magnetic tunnel junction
We found that a magnetic tunnel junction (MTJ) shows two types of memory operation. One is spin torque switching, and the other is electric stress induced resistive switching (RS), which is observedExpand
Electroforming, magnetic and resistive switching in MgO-based tunnel junctions
Magnetic tunnel junctions (MTJs) are under investigation since they offer great potential for applications in magnetic memories. An interesting effect in TJs concerns non-volatile resistive switchingExpand
Electrical switching in Fe∕Cr∕MgO∕Fe magnetic tunnel junctions
Hysteretic resistance switching is observed in epitaxial Fe∕Cr∕MgO∕Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1V. The junctions switch backExpand
Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110%Expand
Memristive switching mechanism for metal/oxide/metal nanodevices.
TLDR
Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built. Expand
Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion
Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-induced magnetization switching and magnetic-domain-wall motion. Our examples show that memristive effects areExpand
Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior.
TLDR
A more physical model based on numerical solutions of coupled drift-diffusion equations for electrons and ions with appropriate boundary conditions is provided to obtain physical insight into the transport processes responsible for memristive behavior in semiconductor films. Expand
Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.
TLDR
b, R/R, is 11.8%, 20%, and 24%, respectively, consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films, in qualitative agreement with Slonczewski's model. Expand
Three-state memory combining resistive and magnetic switching using tunnel junctions
Magnetic fields generated by current lines are the standard way of switching between resistance (R) states in magnetic random access memories. A less common but technologically more interestingExpand
Reproducible switching effect in thin oxide films for memory applications
Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulsesExpand
...
1
2
3
...