Memristive switching of MgO based magnetic tunnel junctions

@article{Krzysteczko2009MemristiveSO,
  title={Memristive switching of MgO based magnetic tunnel junctions},
  author={P. Krzysteczko and G. Reiss and A. Thomas},
  journal={Applied Physics Letters},
  year={2009},
  volume={95},
  pages={112508}
}
Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending on the bias history, which provides a method for multibit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO… Expand
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