# Memristive switching mechanism for metal/oxide/metal nanodevices.

@article{Yang2008MemristiveSM,
title={Memristive switching mechanism for metal/oxide/metal nanodevices.},
author={Jianhua Joshua Yang and Matthew D. Pickett and Xuema Li and Douglas A. A. Ohlberg and Duncan R. Stewart and R. Stanley Williams},
journal={Nature nanotechnology},
year={2008},
volume={3 7},
pages={
429-33
}
}
• J. Yang, +3 authors R. Williams
• Published 15 June 2008
• Materials Science, Medicine
• Nature nanotechnology
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the 'memristor' (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour… Expand
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