• DOI:10.1038/nnano.2012.240
• Corpus ID: 38314993

Memristive devices for computing.

@article{Yang2013MemristiveDF,
  title={Memristive devices for computing.},
  author={J. Joshua Yang and Dmitri B. Strukov and Duncan R. Stewart},
  journal={Nature nanotechnology},
  year={2013},
  volume={8 1},
  pages={
          13-24
        }
}

• J. Yang, D. Strukov, D. Stewart
• Published 2013
• Chemistry
• Nature nanotechnology

Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.