Memory effect in MOS structures containing amorphous or crystalline silicon nanoparticles

@article{Nedev2008MemoryEI,
  title={Memory effect in MOS structures containing amorphous or crystalline silicon nanoparticles},
  author={Nicola Nedev and Desislava Nesheva and E. Manolov and Rainer Bruggemann and Stephan Meier and Zohar Levi},
  journal={2008 26th International Conference on Microelectronics},
  year={2008},
  pages={117-120}
}
Metal-oxide-silicon structures are fabricated by sequential physical vapor deposition of SiOx (x=1.15) and RF sputtering of SiO2 on n-type crystalline silicon. High temperature annealing in an inert gas ambient at 700degC or 1000degC is used to grow amorphous or crystalline silicon nanoparticles in the SiOx layer. The nanoparticle formation is proven by… CONTINUE READING