• Corpus ID: 252519550

Memory and transduction prospects for silicon T centre devices

@inproceedings{Higginbottom2022MemoryAT,
  title={Memory and transduction prospects for silicon T centre devices},
  author={Daniel B. Higginbottom and F Kimiaee Asadi and Camille Chartrand and Jiawei Ji and Laurent Bergeron and Mike L. W. Thewalt and Christoph Simon and Stephanie Simmons},
  year={2022}
}
The T centre, a silicon-native spin-photon interface with telecommunications-band optical transitions and long-lived microwave qubits, offers an appealing new platform for both optical quantum memory and microwave to optical telecommunications band transduction. A wide range of quantum memory and transduction schemes could be implemented on such a platform, with advantages and disadvantages that depend sensitively on the ensemble properties. In this work we characterize T centre spin ensembles… 

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