• Corpus ID: 252519550

Memory and transduction prospects for silicon T centre devices

@inproceedings{Higginbottom2022MemoryAT,
  title={Memory and transduction prospects for silicon T centre devices},
  author={Daniel B. Higginbottom and F Kimiaee Asadi and Camille Chartrand and Jiawei Ji and Laurent Bergeron and Mike L. W. Thewalt and Christoph Simon and Stephanie Simmons},
  year={2022}
}

• D. Higginbottom, F. Asadi, +5 authors S. Simmons
• Published 23 September 2022
• Physics

The T centre, a silicon-native spin-photon interface with telecommunications-band optical transitions and long-lived microwave qubits, offers an appealing new platform for both optical quantum memory and microwave to optical telecommunications band transduction. A wide range of quantum memory and transduction schemes could be implemented on such a platform, with advantages and disadvantages that depend sensitively on the ensemble properties. In this work we characterize T centre spin ensembles to inform device design. We perform the first T ensemble optical depth measurement and calculate the improvement in centre density or resonant optical enhancement required for efficient optical quantum memory. We further demonstrate a coherent microwave interface by coherent population trapping (CPT) and Autler-Townes splitting (ATS). We then determine the most promising microwave and optical quantum memory protocol for such ensembles. By estimat-ing the memory efficiency both in free-space and in the presence of a cavity, we show that efficient optical memory is possible with forecast densities. Finally, we formulate a transduction proposal and discuss the achievable efficiency and fidelity.