Memory State Transient Analysis (MSTA): A New Soft Error Rate Measurement Method for CMOS Memory Elements Based on Stochastic Analysis

We analyze the evolution of SRAM memory logic contents under irradiation by defining the memory state as the number of cells storing a given logic value (i.e. number of cells storing a logic-1). We find that the memory state evolution under irradiation follows an Ehrenfest urn model due to the constant effect of single event upsets, and that in large… (More)