Memory Reliability Model for Accumulated and Clustered Soft Errors

  title={Memory Reliability Model for Accumulated and Clustered Soft Errors},
  author={Soonyoung Lee and Sanghyeon Baeg and Pedro Reviriego},
  journal={IEEE Transactions on Nuclear Science},
The soft error rates of memories are increased by high-energy particles as technology shrinks. Single-error correction codes (SEC), scrubbing techniques, and interleaving distance (ID) schemes are the most common approaches for protecting memories from soft errors. It is essential to employ analytical models to guide the selection of the interleaving distance; relying on rough estimates may lead to unreasonable design choices. The analytical model proposed in this paper includes the row… CONTINUE READING
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Memory reliability model for accumulated and clustered soft errors

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2 Excerpts

tection of memories suffering MCUs through the selection of the optimal interleaving distance

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