Memory, Memristors, and Atomristors

@article{Akinwande2018MemoryMA,
  title={Memory, Memristors, and Atomristors},
  author={Deji Akinwande},
  journal={IEEE Micro},
  year={2018},
  volume={38},
  pages={50-52}
}
While the odds are that a universal non-volatile memory device is a mirage, there is significant global research on emerging memories such as RRAM regarding their potential as worthy candidates. 

Figures from this paper

Modeling of High and Low Resistant States in Single Defect Atomristors

Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low

Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays

This Report serves as a guide for the hardware implementation of NCS based on large‐scale CBAs and recommends for further performance optimization at the device, circuit, and algorithm levels are proposed.

References

SHOWING 1-3 OF 3 REFERENCES

Memory leads the way to better computing.

New non-volatile memory devices store information using different physical mechanisms from those employed in today's memories and could achieve substantial improvements in computing performance and

Metal–Oxide RRAM

The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.

Three Fingerprints of Memristor

This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a “pinched