Mechanisms of imprint effect on ferroelectric thin films

Abstract

We have developed a single/double layer model to explain horizontal shifting of measured D-E hysteresis loops imprint for ferroelectric thin films. Such phenomenon can be explained by considering three mechanisms or their multiple effects: 1 stress induced by film/electrode lattice mismatch or clamping, 2 domain pinning induced by, e.g., oxygen vacancies… (More)

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