Mechanisms of imprint effect on ferroelectric thin films


We have developed a single/double layer model to explain horizontal shifting of measured D-E hysteresis loops imprint for ferroelectric thin films. Such phenomenon can be explained by considering three mechanisms or their multiple effects: 1 stress induced by film/electrode lattice mismatch or clamping, 2 domain pinning induced by, e.g., oxygen vacancies… (More)


13 Figures and Tables

Slides referencing similar topics