Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

@inproceedings{BourretCourchesne2001MechanismsOD,
  title={Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer},
  author={Edith D. Bourret-Courchesne and Kin Man Yu and Mourad Benamara and Zuzanna Liliental-Weber and John Washburn and Ernest Orlando Lawrence},
  year={2001}
}
A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the initial growth at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate… CONTINUE READING

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