Mechanisms of current collapse and gate leakage currents in AlGaN'GaN heterostructure field effect transistors

@inproceedings{Hasegawa2003MechanismsOC,
  title={Mechanisms of current collapse and gate leakage currents in AlGaN'GaN heterostructure field effect transistors},
  author={Hideki Hasegawa and Takanori Inagaki and Shinya Ootomo and Tamotsu Hashizume},
  year={2003}
}
In order to clarify the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor (HFET), detailed electrical properties of the ungated portion and Schottky-gated portion of the device were investigated separately, using a gateless HFET structure and an AlGaN Schottky diode structure. The gateless device was subjected to plasma treatments and surface passivation processes including our novel Al2O3-based surface passivation. dc I–V… CONTINUE READING

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