Mechanisms of copper chemical vapor deposition

@article{Cohen1992MechanismsOC,
  title={Mechanisms of copper chemical vapor deposition},
  author={Susan L. Cohen and M. Liehr and S. Kasi},
  journal={Applied Physics Letters},
  year={1992},
  volume={60},
  pages={50-52}
}
The mechanism of copper chemical vapor deposition from Cu(II)bis‐hexafluoroacetylacetonate [Cu(hfac)2] and 1,5‐cyclooctadiene‐Cu(I)‐hexafluoroacetylacetonate (COD‐Cu‐hfac) has been determined. The results explain the different processing conditions required for deposition from the precursors. Both molecules react at room temperature on Ag to form a similar Cu(I)‐hfac surface intermediate. Subsequent reaction of the COD‐Cu‐hfac fragment can lead to loss of the organic ligands leaving clean Cu… Expand
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