Mechanisms for plasma etching of HfO 2 gate stacks with Si selectivity and photoresist trimming

  • Juline Shoeba, Mark J. Kushnerb
  • Published 2009
To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant high-k metal oxides, and HfO2 in particular, are being implemented as a replacement for SiO2. To speed the rate of processing, it is desirable to etch the gate stack e.g., metal gate, antireflection layers, and… CONTINUE READING