Mechanisms for CF 2 radical generation and loss on surfaces in fluorocarbon plasmas

@inproceedings{Zhanga2000MechanismsFC,
  title={Mechanisms for CF 2 radical generation and loss on surfaces in fluorocarbon plasmas},
  author={Da Zhanga and Mark J. Kushnerb},
  year={2000}
}
  • Da Zhanga, Mark J. Kushnerb
  • Published 2000
During fluorocarbon plasma etching, plasma-surface reactions result in the surface acting as either a source or sink for reactive species, thereby impacting the properties of the bulk plasma. For example, experiments have shown that surfaces in radio frequency ~rf! capacitively coupled discharges can be either sources or sinks of CF2 depending on, among other properties, the sheath potential. The coupling of rf bulk and surface reactions, and their combined effects on the CF2 density, were… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-10 of 12 references

Proceedings of the 2nd International Conference on Reactive Plasmas

D C Gray, I Tepermeister, H H Sawin
Proceedings of the 2nd International Conference on Reactive Plasmas • 1994

Gaseous Dielectrics V

M Hayashi
Gaseous Dielectrics V • 1924

Dokl. Phys. Chem

L Duman, N P Tishchenko, I P Shmatov
Dokl. Phys. Chem

J. Appl. Phys

M Hayashi, T Nimura
J. Appl. Phys

J. Chem. Phys

R E Olson, J R Peterson, J Moseley
J. Chem. Phys

J. Electrochem. Soc

A J Bariya, C W Frank, J P Mcvittie
J. Electrochem. Soc

J. Vac. Sci. Technol. A

M Haverlay, W W Stoffels, E Stoffels, G M W Kroesen, F J De Hoog
J. Vac. Sci. Technol. A

J. Vac. Sci. Technol. A J. Appl. Phys

S Oehrlein, J M Cook
J. Vac. Sci. Technol. A J. Appl. Phys

J. Vac. Sci. Technol. B

M Shaepkens, G S Oehrlein, J M Cook
J. Vac. Sci. Technol. B

Jpn. J. Appl. Phys., Part

R A Bonham
Jpn. J. Appl. Phys., Part

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