Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides.

  title={Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides.},
  author={Mike Tebyetekerwa and Jian Zhang and Zhen Xu and Thien N. Truong and Zongyou Yin and Yuerui Lu and Seeram Ramakrishna and Daniel H. Macdonald and Hieu T. Nguyen},
  journal={ACS nano},
Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors exhibit many important structural and optoelectronic properties, such as strong light-matter interactions, direct bandgaps tunable from visible to near-infrared regions, flexibility and atomic thickness, quantum-confinement effects, valley polarization possibilities, and so on. Therefore, they are regarded as a very promising class of materials for next-generation state-of-the-art nano/micro optoelectronic devices. To… 
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Photoluminescence quantum yield of transition metal dichalcogenide
  • M. Wu
  • Physics, Chemistry
  • 2022
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Room Temperature Enhancement of Electronic Materials by Superacid Analogues.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides.
The most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically-thin TMDs - in the form of substrate-supported or solution-dispersed nanosheets - are reviewed and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems are discussed.
Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.
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Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
Two-dimensional group-VI transition metal dichalcogenide semiconductors, such as MoS2, WSe2, and others, exhibit strong light-matter coupling and possess direct band gaps in the infrared and visible
Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment.
It is reported that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trap-state emission and promote the neutral exciton and trion emission in defective MoSe2 monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30.
Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides.
The experimental and simulation results reveal that photoexcited electron-hole pairs in the nesting region spontaneously separate in k-space, relaxing towards immediate band extrema with opposite momentum, implying that the loss of photocarriers due to direct exciton recombination is temporarily suppressed for excitation in resonance with band nesting.
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The recently discovered unique optoelectronic properties and chemical robustness of mono- or few-layer two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) such as MoS2, WS2,
Many-Body Complexes in 2D Semiconductors.
A topical and concise summary of the recent frontier research progress related to many-body complexes in 2D semiconductors is provided, covering the aspects of fundamental theory, experimental investigations, modulation of properties, and optoelectronic applications.
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Experimental evidence of a series of excitonic dark states in single-layer WS2 using two-photon excitation spectroscopy is reported, and it is proved that the excitons are of Wannier type, meaning that each exciton wavefunction extends over multiple unit cells, but with extraordinarily large binding energy.