Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth

Abstract

Xianfan Xu Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; and School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907 Eric A. Stach Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; and School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 Chen Yang Department of Chemistry, Purdue University, West Lafayette, Indiana 47907; and Department of Physics, Purdue University, West Lafayette, Indiana 47907

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Cite this paper

@inproceedings{Park2011MechanismOV, title={Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth}, author={Se Jun Park and Sung H. Chung and Bong-Joong Kim and Minghao Qi and Xianfan Xu and Jun Eun Park and Eric A Stach and Chen Yang}, year={2011} }