Mechanism of enhancement in electromagnetic properties of MgB2 by Nano SiC doping.

@article{Dou2007MechanismOE,
  title={Mechanism of enhancement in electromagnetic properties of MgB2 by Nano SiC doping.},
  author={S. X. Dou and Olga Shcherbakova and Wai Kong Yeoh and Jun Hee Kim and Saeid Soltanian and Xuelei Wang and C.. Senatore and R. Flukiger and Marc Dhalle and O Husnjak and Emil Babi{\'c}},
  journal={Physical review letters},
  year={2007},
  volume={98 9},
  pages={097002}
}
A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility field (H_{irr}) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that… CONTINUE READING
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Mechanism of Enhancement in Electromagnetic Properties of MgB 2 by Nano SiC Doping

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