Mechanism of IR Photoresponse in Nanopatterned InAs/GaAs Quantum Dot p-i-n Photodiodes

@article{Souza2010MechanismOI,
  title={Mechanism of IR Photoresponse in Nanopatterned InAs/GaAs Quantum Dot p-i-n Photodiodes},
  author={C. F. de Souza and Ahad Alizadeh and Sudha Nair and I. I. Saveliev and Marina Blumin and H. E. Ruda and D. C. Hays and V. H. Watkins and K. R. Conway and Elizabeth Braunstein},
  journal={IEEE Journal of Quantum Electronics},
  year={2010},
  volume={46},
  pages={832-836}
}
We report on measurements of the infrared photo-response of InAs-based p-i-n diodes in the spectral region above 1.8 ¿m. These photodiodes were fabricated from arrays of InAs quantum dots grown in nano-patterned template structures using a combination of block copolymer lithography and molecular beam epitaxy. The devices studied were comprised of a single layer of quantum dots. The temperature dependence of the current versus voltage for these devices is presented and discussed. Finally, a… CONTINUE READING

Figures from this paper.

References

Publications referenced by this paper.
SHOWING 1-10 OF 13 REFERENCES

Quantum-Dot Infrared Photodetectors

  • Proceedings of the IEEE
  • 2007
VIEW 3 EXCERPTS
HIGHLY INFLUENTIAL

C

A. Alizadeh, D. Hays, +5 authors L. Denault
  • de Souza, I. Saveliev, M. Blumin, H. E. Ruda, E. Braunstein, and C. Jones, Appl. Phys. Lett., vol. 94, p. 163112
  • 2009
VIEW 3 EXCERPTS

J

A. Alizadeh, D. Hays, +14 authors C. Jones
  • Appl. Phys., vol. 105, p. 54305
  • 2009
VIEW 2 EXCERPTS

Appl

H. Lim, S. Tsao, W. Zhang, M. Razeghi
  • Phys. Lett., vol. 90, p. 131112
  • 2007
VIEW 3 EXCERPTS

Phys

M. Gonschorek, H. Schmidt, +4 authors M. Grundmann
  • Rev. B, vol. 74, p. 115312
  • 2006

Appl

N. V. Baidus, A. Chahboun, +4 authors B. N. Zvonkov
  • Phys. Lett., vol. 87, p. 053109
  • 2005

J

A. Alizadeh, P. Sharma, S. Ganti, S. F. LeBoeuf, L. Tsakalakos
  • Appl. Phys., vol. 95, p. 8199
  • 2004