Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics

@article{Prati2010MeasuringTT,
  title={Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics},
  author={Enrico Prati and M. Belli and Marco Fanciulli and Giorgio Ferrari},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2010}
}
We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical… 
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References

SHOWING 1-10 OF 21 REFERENCES
The finite quantum grand canonical ensemble and temperature from single-electron statistics for a mesoscopic device
I present a theoretical model of a quantum statistical ensemble for which, unlike in conventional physics, the total number of particles is extremely small. The thermodynamical quantities are…
Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures
The thermal and gate-voltage dependencies for the capture and emission times of random telegraph signals have been theoretically analyzed in a Si-SiO2 interface. A quasi-two-dimensional treatment of…
Transport spectroscopy of a single dopant in a gated silicon nanowire.
TLDR
Spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator finds excited states and Zeeman splitting under magnetic field present large energies potentially useful to build atomic scale devices.
Probing the spin state of a single electron trap by random telegraph signal.
TLDR
It is shown that a model using the grand partition theorem can qualitatively explain the change in statistics of the RTS as a function of the applied magnetic field.
Opportunities for mesoscopics in thermometry and refrigeration: Physics and applications
This review presents an overview of the thermal properties of mesoscopic structures. The discussion is based on the concept of electron energy distribution, and, in particular, on controlling and…
Microwave-assisted transport in a single-donor silicon quantum dot
Single donors in semiconductor nanostructures represent a key element to develop spin-related quantum functionalities in atomic-scale devices. Quantum transport through a single arsenic donor in the…
Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
Telegraph noise, which originates from the switching of charge between metastable trapping sites, becomes increasingly important as device sizes approach the nanoscale. For charge-based quantum…
Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors
We report on the current fluctuations of random telegraph signal experimentally observed at cryogenic temperatures in ordinary submicron Si∕SiO2 metal-oxide-semiconductor field-effect transistors…
Theoretical and experimental aspects of the thermal dependence of electron capture coefficients
The thermal activation of the capture coefficient c is very often treated in a semiclassical way, resulting from a simple energy barrier. Experimentally, this activation energy Eb is said to be the…
Coulomb blockade in low-mobility nanometer size Si MOSFET’s
We investigate coherent transport in Si metal-oxide-semiconductor field-effect transistors with nominal gate lengths 50\char21{}100 nm and various widths at very low temperature. Independent of the…
...
1
2
3
...