Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics

@article{Prati2010MeasuringTT,
  title={Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics},
  author={Enrico Prati and M. Belli and Marco Fanciulli and Giorgio Ferrari},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2010}
}
We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical… 
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