• DOI:10.1364/OE.455491
• Corpus ID: 248174144

Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers

@article{Mahoney2022MeasurementOT,
  title={Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers},
  author={Joe Mahoney and Mingchu Tang and Huiyun Liu and Nicol{\'a}s Abad{\'i}a},
  journal={Optics Express},
  year={2022}
}

• Joe Mahoney, M. Tang, +1 author Nicolás Abadía
• Published 13 April 2022
• Physics
• Optics Express

: The quantum-confined Stark effect in 𝐼𝑛𝐴𝑠 / 𝐼𝑛 ( 𝐺𝑎 ) 𝐴𝑠 quantum dots ( 𝑄𝐷𝑠 ) using non-intentionally doped and p-doped 𝑄𝐷 barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped 𝑄𝐷 barriers lead to a better Figure of Merit ( 𝐹𝑜𝑀 ), defined as the ratio of the change in absorption Δ 𝛼 for a reverse bias voltage swing to the loss at 1 𝑉 𝛼 ( 1 𝑉 ) , 𝐹𝑜𝑀 = Δ 𝛼 / 𝛼 ( 1 𝑉 ) . The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the 𝑄𝐷 barriers can lead to more than a 3 𝑥 increase in 𝐹𝑜𝑀 modulator performance between temperatures of − 73 ◦ 𝐶 to 100 ◦ 𝐶 when compared with the stack with 𝑁𝐼𝐷 𝑄𝐷 barriers.