Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers

@article{Mahoney2022MeasurementOT,
  title={Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers},
  author={Joe Mahoney and Mingchu Tang and Huiyun Liu and Nicol{\'a}s Abad{\'i}a},
  journal={Optics Express},
  year={2022}
}
: The quantum-confined Stark effect in 𝐼𝑛𝐴𝑠 / 𝐼𝑛 ( πΊπ‘Ž ) 𝐴𝑠 quantum dots ( 𝑄𝐷𝑠 ) using non-intentionally doped and p-doped 𝑄𝐷 barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped 𝑄𝐷 barriers lead to a better Figure of Merit ( πΉπ‘œπ‘€ ), defined as the ratio of the change in absorption Ξ” 𝛼 for a reverse bias voltage swing to the loss at 1 𝑉 𝛼 ( 1 𝑉 ) , πΉπ‘œπ‘€ = Ξ” 𝛼 / 𝛼 ( 1 𝑉 ) . The improved performance… 

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TLDR
It is demonstrated that the excited state transitions arise from lateral quantization and that tuning through the inhomogeneous distribution of dot energies can be achieved by variation of electric field.
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