Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

@article{Kersting2021MeasurementOO,
  title={Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials},
  author={Benedikt Kersting and Syed Ghazi Sarwat and Manuel Le Gallo and Kevin Brew and S. Walfort and Nicole Saulnier and Martin Salinga and Abu Sebastian},
  journal={Advanced Functional Materials},
  year={2021},
  volume={31}
}
Chalcogenide phase change materials enable non‐volatile, low‐latency storage‐class memory. They are also being explored for new forms of computing such as neuromorphic and in‐memory computing. A key challenge, however, is the temporal drift in the electrical resistance of the amorphous states that encode data. Drift, caused by the spontaneous structural relaxation of the newly recreated melt‐quenched amorphous phase, has consistently been observed to have a logarithmic dependence in time. Here… 
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References

SHOWING 1-10 OF 51 REFERENCES
Collective Structural Relaxation in Phase‐Change Memory Devices
TLDR
By linking the physical material parameters governing electrical transport to such a description of structural relaxation, an integrated drift model that is able to predict the current–voltage characteristics at any instance in time even during nontrivial temperature treatments is obtained.
A collective relaxation model for resistance drift in phase change memory cells
TLDR
This article presents a comprehensive description of the time-temperature dependence of the resistance variation in a PCM cell using a structural relaxation model and an electrical transport model.
Modeling of Threshold-Voltage Drift in Phase-Change Memory (PCM) Devices
The amorphous phase of the chalcogenide material in phase-change memory (PCM) devices is sensitive to temperature-activated crystallization and structural relaxation (SR). The latter leads to a
Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling
Phase-change memory (PCM) cells are affected by structural relaxation (SR), which is the atomic-scale rearrangement of the amorphous phase of the chalcogenide material. Since SR affects the stability
Modeling of Threshold Voltage Drift in Phase Change Memory (PCM) Devices
The stability of the amorphous phase in phase- change-memory (PCM) devices can be affected by temperature-activated crystallization and resistance drift due to structural relaxation (SR). While
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5
The structural relaxation (SR) process in an amorphous chalcogenide material (Ge2Sb2Te5) is studied by electrical measurements on phase-change memory devices. SR induces a change in the conduction
Physical origin of the resistance drift exponent in amorphous phase change materials
The resistance of amorphous chalcogenides used in phase change memory devices increases over time due to structural relaxation (SR). The resistance drift usually follows a power law with time
Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase.
TLDR
An experimental methodology is developed that enables ultrafast characterization of phase-change dynamics on a more technologically relevant melt-quenched amorphous phase using practical device structures and shows degradation in the cell retention properties due to elemental segregation.
Subthreshold electrical transport in amorphous phase-change materials
Chalcogenide-based phase-change materials play a prominent role in information technology. In spite of decades of research, the details of electrical transport in these materials are still debated.
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