Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

  title={Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials},
  author={Benedikt Kersting and Syed Ghazi Sarwat and Manuel Le Gallo and Kevin Brew and S. Walfort and Nicole Saulnier and Martin Salinga and Abu Sebastian},
  journal={Advanced Functional Materials},
Chalcogenide phase change materials enable non‐volatile, low‐latency storage‐class memory. They are also being explored for new forms of computing such as neuromorphic and in‐memory computing. A key challenge, however, is the temporal drift in the electrical resistance of the amorphous states that encode data. Drift, caused by the spontaneous structural relaxation of the newly recreated melt‐quenched amorphous phase, has consistently been observed to have a logarithmic dependence in time. Here… 
3 Citations
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