Measurement of IGBT High-Frequency Input Impedance in Short Circuit

  title={Measurement of IGBT High-Frequency Input Impedance in Short Circuit},
  author={Carmine Abbate and Giovanni Busatto and Annunziata Sanseverino and Francesco Velardi and Sara Iavarone and Cesare Ronsisvalle},
  journal={IEEE Transactions on Power Electronics},
Insulated-gate bipolar transistors (IGBTs) operated in short circuit become instable in certain driving and load conditions. The induced oscillations can compromise robustness and reliability of the entire power converter. The stability of the device inserted in a real system can be analyzed using the theory of linear oscillators that requires the knowledge of input or output impedance of the device in real operating conditions. In this paper, we present an experimental procedure for measuring… CONTINUE READING
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Oscillation effects in IGBT’s related to negative capacitance phenomena

  • I. Omura, W. Fichtner, H. Ohashi
  • IEEE Trans. Electron Devices, vol. 46, no. 1, pp…
  • 1999
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