Measurement based nonlinear electrothermal modeling of GaAs FET with dynamical trapping effects

@article{Ouarch1998MeasurementBN,
  title={Measurement based nonlinear electrothermal modeling of GaAs FET with dynamical trapping effects},
  author={Z. Ouarch and J J Collantes and J. P. Teyssier and Romain Quere},
  journal={1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)},
  year={1998},
  volume={2},
  pages={599-602 vol.2}
}
This paper presents MESFET measurement methods based on pulsed measurements that separate trapping and thermal effects. Derived from these measurements, a model of the trapping effect is determined, as well as a thermal model. The proposed nonlinear model is validated from DC to RF frequencies, it handles dynamical dispersive effects and does not depend on the hot bias point. 
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