Measurement and characterization of hot carrier safe operating area (HCI-SOA) in 24V n-type lateral DMOS transistors

@article{Soin2012MeasurementAC,
  title={Measurement and characterization of hot carrier safe operating area (HCI-SOA) in 24V n-type lateral DMOS transistors},
  author={Norhayati Soin and S. S. Shahabuddin and Kim-Leng Goh},
  journal={2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)},
  year={2012},
  pages={659-663}
}
Due to strong demand on smart-power technologies, LDMOS device has been widely used because of its compatibility with standard CMOS process. For most fabrication companies, this is an attractive reason to extend the existing technology applications. However, the device is vulnerable to hot carrier (HCI) damage. SOA in HCI is one of the major criteria to address the concern in LDMOS device design. There are a lot of reliability studies focusing on the HCI failure mechanism but not many… CONTINUE READING
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