Materials science: Silicon carbide in contention
@article{Madar2004MaterialsSS, title={Materials science: Silicon carbide in contention}, author={Roland Madar}, journal={Nature}, year={2004}, volume={430}, pages={974-975} }
Silicon carbide is a highly desirable material for high-power electronic devices — more desirable even than silicon. And now the problem of producing large, pure wafers of the carbide could be solved.
156 Citations
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References
SHOWING 1-4 OF 4 REFERENCES
Investigation of growth processes of ingots of silicon carbide single crystals
- Materials Science
- 1978
Ultrahigh-quality silicon carbide single crystals
- Materials ScienceNature
- 2004
A method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth), to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free.
High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
- Materials Science
- 2002