Materials science: Changing face of the chameleon

@article{Greer2005MaterialsSC,
  title={Materials science: Changing face of the chameleon},
  author={Alan Lindsay Greer and Neil D Mathur},
  journal={Nature},
  year={2005},
  volume={437},
  pages={1246-1247}
}
Chalcogenide materials form the basis of CD and DVD technologies. But an identity crisis looms in the wider field: what role do atomic reconfiguration, electronic processes and ionic movement play in these materials? 
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References

SHOWING 1-9 OF 9 REFERENCES
Ovonics : From science to products
Ovshinsky's pioneering work and inventions in amorphous chalcogenide semiconductor materials in the 1960s invigorated an entire field of physics. The electronic switching he first demonstrated has
Nanoscale memory elements based on solid-state electrolytes
We report on the fabrication and characterization of nanoscale memory elements based on solid electrolytes. When combined with silver, chalcogenide glasses such as Se-rich Ge-Se are good solid
Threshold Switching in Chalcogenide-Glass Thin Films
The application of sufficiently high electric fields to any material eventually results in deviations from linearity in the observed current-voltage I(V) characteristic. There are two general classes
Quantized conductance atomic switch
TLDR
It is demonstrated that a quantized conductance atomic switch (QCAS) can switch between ‘on’ and ‘off’ states at room temperature and in air at a frequency of 1 MHz and at a small operating voltage (600 mV).
Phase-change recording medium that enables ultrahigh-density electron-beam data storage
An ultrahigh-density electron-beam-based data storage medium is described that consists of a diode formed by growing an InSe/GaSe phase-change bilayer film epitaxially on silicon. Bits are recorded
Low-cost and nanoscale non-volatile memory concept for future silicon chips
TLDR
The feasibility of a new semiconductor memory concept that promises that integration into a logic complementary metal oxide semiconductor (CMOS) process flow might be possible with only a few additional lithographic steps is demonstrated.
Reversible Electrical Switching Phenomena in Disordered Structures
We describe here a rapid and reversible transition between a highly resistive and a conductive state effected by an electric field which we have observed in various types of disordered materials,
Optical cognitive information processing: A new field
I will discuss unique electronic and structural mechanisms of Ovonic optical phase-change devices making possible orders of magnitude increase of density of memory and introducing multiple