Materials properties of out-of-plane heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$

@article{Amin2016MaterialsPO,
  title={Materials properties of out-of-plane heterostructures of MoS\$\_2\$-WSe\$\_2\$ and WS\$\_2\$-MoSe\$\_2\$},
  author={Bin Amin and Thaneshwor P. Kaloni and Georg Schreckenbach and Michael S. Freund},
  journal={arXiv: Materials Science},
  year={2016}
}
Based on first-principles calculations, the materials properties (structural, electronic, vibrational, and optical properties) of out-of-plane heterostructures formed from the transiti on metal dichalcogenides, specifically MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ were investigated. The heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ are found to be direct and ind irect band gap semiconductors, respectively. However, a direct band gap in the WS$_2$-MoSe$_2$ heterostructure can be achieved by… Expand

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