Material Considerations for Avalanche Photodiodes

@article{David2008MaterialCF,
  title={Material Considerations for Avalanche Photodiodes},
  author={J. P. R. David and C. H. Tan},
  journal={IEEE Journal of Selected Topics in Quantum Electronics},
  year={2008},
  volume={14},
  pages={998-1009}
}
Avalanche photodiodes (APDs) are widely used to detect and amplify weak optical signals by utilizing the impact ionization process. The choice of material is critical for the detection of a particular wavelength, and it is often expedient to use a combination of different materials to optimize the overall device performance. The APDs are now capable of covering a wide spectrum from the infrared down to the ultraviolet wavelengths. This paper will review the material requirements to achieve high… CONTINUE READING

Citations

Publications citing this paper.
Showing 1-9 of 9 extracted citations

2.25- $\mu$ m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP

IEEE Photonics Technology Letters • 2017
View 3 Excerpts
Highly Influenced

Multiplication gain and excess noise factor in 4H-SiC APD

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) • 2012
View 3 Excerpts

References

Publications referenced by this paper.
Showing 1-10 of 82 references

InGaAsP heterojunction avalanche photodiodes with high avalanche gain

K. Nishida, K. Taguchi, Y. Matsumoto
Appl. Phys. Lett., vol. 35, no. 3, pp. 251–253, Aug. 1979. • 1979
View 8 Excerpts
Highly Influenced

Avalanche Noise Characteristics in Submicron InP Diodes

IEEE Journal of Quantum Electronics • 2008
View 5 Excerpts

Avalanche Multiplication in InAlAs

IEEE Transactions on Electron Devices • 2007
View 4 Excerpts

Excess avalanche noise in In0 .52Al0 .48As

Y. L. Goh, A.R.J. Marshall, +7 authors S. M. Pinches
IEEE J. Quantum Electron., vol. 43, no. 5–6, pp. 503–507, May 2007. • 2007
View 2 Excerpts

Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

R. McClintock, J. L. Pau, +3 authors M. Razeghi
Appl. Phys. Lett., vol. 90, no. 14, Article no. 141112, Apr. 2007. • 2007
View 1 Excerpt

Recent advances in telecommunications avalanche photodiodes

J. C. Campbell
J. Lightw. Tech., vol. 25, no. 1, pp. 109–121, Jan. 2007. • 2007
View 1 Excerpt

2.4 mm cutoff wavelength avalanche photodiode on InP substrate

R. Sidhu, L. Zhang, +6 authors M. A. Itzler
Electron. Lett., vol. 42, no. 3, Feb. 2006. • 2006
View 2 Excerpts

A New Planar InGaAs–InAlAs Avalanche Photodiode

IEEE Photonics Technology Letters • 2006
View 1 Excerpt

Similar Papers

Loading similar papers…