Matched pair of CoolMOS transistor with SiC-Schottky diode - advantages in application

@article{Lorenz2001MatchedPO,
  title={Matched pair of CoolMOS transistor with SiC-Schottky diode - advantages in application},
  author={Leo Lorenz and Gerald Deboy and Igor A. Zverev},
  journal={Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248)},
  year={2001},
  volume={1},
  pages={376-383 vol.1}
}
The new CoolMOS C3 generation combines extremely high on-state conductivity with ultrafast switching speed at full pulse current capability. In the first generation of CoolMOS the saturation current was intentionally reduced at the cell level for the benefit of short-circuit ruggedness. This technique results in a reduced current capability of the device at low gate voltages, which has been overcome today by the C3 family. In some applications the outstanding switching performance of the… CONTINUE READING
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