Mass slit graphite of semiconductor ion implanter

@inproceedings{1998MassSG,
  title={Mass slit graphite of semiconductor ion implanter},
  author={윤규일},
  year={1998}
}
PURPOSE: A mass slit graphite of a semiconductor ion implanter adjusts a beam quantity scanned to end station having a wafer of ion implantation and a scanning angle, and prevents that a chamber is melted by a beam and a neutral current is set up to be higher than end station current. CONSTITUTION: A mass slit graphite(20) of a semiconductor ion implanter forms a slit(22) for a beam penetration to a central part. A reinforcement stand(24) has a penetration hole(26) of which a formation is the… CONTINUE READING