Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

Abstract

In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results… (More)
DOI: 10.1186/1556-276X-9-59

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