Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias

@article{Sambandan2005MarkovMF,
  title={Markov model for threshold-voltage shift in amorphous silicon TFTs for variable gate bias},
  author={Sanjiv Sambandan and Lei Zhu and Denis Striakhilev and Peyman Servati and Arokia Nathan},
  journal={IEEE Electron Device Letters},
  year={2005},
  volume={26},
  pages={375-377}
}
Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used in active matrix displays and sensors, in which their operation is typically analog in nature. However, the TFT experiences a V/sub T/ shift with time under gate bias, and the need for a model of the V/sub T/ shift with variable gate bias is imperative for robust circuit design. A model for the V/sub T/ shift under constant and variable gate bias has been presented and agrees with measurement results. The developed model… CONTINUE READING
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