Many-body effects on modulation-doped InAs/GaAs quantum dots

@article{Lee1997ManybodyEO,
  title={Many-body effects on modulation-doped InAs/GaAs quantum dots},
  author={Joo In Lee and H. Lee and E. Shin and Sungkyu Yu and D. Kim and G. Ihm},
  journal={Applied Physics Letters},
  year={1997},
  volume={70},
  pages={2885-2887}
}
The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots. 
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References

SHOWING 1-10 OF 17 REFERENCES
Nature of optical transitions in self-organized InAs/GaAs quantum dots.
Band-gap renormalization in quantum wires.
Intrinsic linewidths and radiative lifetimes of free excitons in GaAs quantum wells.
Band-gap renormalization in semiconductor quantum wells containing carriers.
  • Kleinman, Miller
  • Physics, Medicine
  • Physical review. B, Condensed matter
  • 1985
...
1
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