Manufacturing of high aspect-ratio p-n junctions using vapor phase doping for application in multi-Resurf devices

@article{Rochefort2002ManufacturingOH,
  title={Manufacturing of high aspect-ratio p-n junctions using vapor phase doping for application in multi-Resurf devices},
  author={Christian Rochefort and Rob van Dalen and Natasja Duhayon and W. Vandervorst},
  journal={Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics},
  year={2002},
  pages={237-240}
}
A new technique to manufacture vertical Resurf devices is presented, in which the alternating p-n junctions in the drift region are formed by a combination of trench etching and vapor phase doping (VPD). Scanning capacitance microscopy (SCM) was performed to investigate these deep p-n junctions, showing a uniform doping profile along the full depth of the devices. Electrical measurements on such Resurf diodes display an increase in breakdown voltage from 30 V to 145 V for a device with a 10… CONTINUE READING

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